ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,839, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Ki Hwa... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,840, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device with cap e... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,841, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Gate structure on intrinsic base layer and overhanging la... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,842, issued on July 14, was assigned to HYUNDAI MOTOR COMPANY (Seoul, South Korea) and KIA Corp. (Seoul, South Korea). "Power semiconductor... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,843, issued on July 14, was assigned to IVWorks Co. Ltd. (Daejeon, South Korea). "III-N semiconductor structure and method of manufacturing... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,844, issued on July 14, was assigned to Infineon Technologies Austria AG (Villach, Austria). "Semiconductor device and method of producing ... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,845, issued on July 14, was assigned to HYUNDAI MOBIS Co. LTD. (Seoul, South Korea). "Power semiconductor device and method for manufacturi... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,846, issued on July 14, was assigned to Sumitomo Chemical Co. Ltd. (Tokyo). "Multilayered substrate" was invented by Yoshinobu Narita (Hita... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,847, issued on July 14, was assigned to NXP USA INC. (Austin, Texas). "Semiconductor device with a recessed field plate and method of fabri... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,848, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Selective High-K formation in gate-... Read More